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Water vapour for wet oxidation is generated by use of a steamer ([[media:RASIRC_Steam_generator.pdf|RASIRC Steam Generator ]] ), which gives a very good oxide quality and uniformity.  
Water vapour for wet oxidation is generated by use of a steamer ([[media:RASIRC_Steam_generator.pdf|RASIRC Steam Generator ]] ), which gives a very good oxide quality and uniformity.  


RCA cleaning is not required for new silicon wafers. Wafers from the A-stack, B-stack and E-stack furnaces and wafers from PECVD4 can go directly into the furnace. All other processed wafers will have to be RCA cleaned, before they are allowed in the furnace.
The wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer ([[media:RASIRC_Steam_generator.pdf|RASIRC Steam Generator ]] ), which gives a very good film uniformity. The advantage of this furnace is the brand new wafers no need RCA clean before.


==Calculation for wet oxidation==
==Calculation for wet oxidation==
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