Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec: Difference between revisions
| Line 8: | Line 8: | ||
Listed below are tried parameters, that can be used during deposition. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness. | Listed below are tried parameters, that can be used during deposition. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness. | ||
'''Do not use the power more than | '''Do not use the power more than 180 W without consulting staff''', since the Si target could break into a lot of small pieces. | ||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
| Line 35: | Line 35: | ||
|- | |- | ||
|} | |} | ||
In November 2018 we (reet/paphol) tested Si sputter deposition in the Wordentec at 500 W with a low sputter pressure of 2*10<sup>-3</sup> mbar together with Yannick Seis. The aim was a better uniformity of the sputtered film. See details in the process log. It is thus possible to use a higher power together with a lower pressure, but please do not do this without consulting the Thin Film group. | |||