Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic: Difference between revisions

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| 3          <!--Platen power  -->
| 3          <!--Platen power  -->
| [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic/isoslow1|'''Click HERE!''' ]]      <!-- link processes -->
| [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic/isoslow1|'''Click HERE!''' ]]      <!-- link processes -->
| NA           <!--Keywords  -->
| Note: Lior Shiv got very high etch rate for this recipe >1.5µm/min 2019-07-12           <!--Keywords  -->
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! no name, tested by Lior Shiv@Capres 2019-017-12    <!--Recipe Name  -->
! no name, tested by Lior Shiv@Capres 2019-17-12    <!--Recipe Name  -->
| A          <!--Step  -->
| A          <!--Step  -->
| 20            <!--Temperature  -->
| 20            <!--Temperature  -->

Revision as of 09:40, 13 August 2019

Isotropic etching in silicon on the ICP Metal Etch

Process parameters
Recipe Step Temp. Time Pres. Hardware Gasses RF powers Observations
SF6 O2 C4F8 Ar CF4 H2 CH4 BCl3 Cl2 HBr Coil Platen SEM images of different runs Keywords
isoslow1 A 20 - 10 - 90 0 0 0 0 0 0 0 0 0 400 3 Click HERE! Note: Lior Shiv got very high etch rate for this recipe >1.5µm/min 2019-07-12
no name, tested by Lior Shiv@Capres 2019-17-12 A 20 - 10 - 90 0 0 0 0 0 0 0 0 0 150 3 About 10% load, etch rate around 400nm/min