Specific Process Knowledge/Lithography/4562: Difference between revisions
Appearance
No edit summary |
|||
| Line 18: | Line 18: | ||
==Exposure== | ==Exposure== | ||
Before exposure, the resist must be rehydrated. A 1-2µm thick resist rehydrates in less than 1 minute, a 6µm layer requires 15-20min, and a 10µm layer requires up to an hour. | |||
After exposure, the nitrogen generated must be allowed to diffuse out, in order to avoid bubble formation (in particular before any heating). This process is similar to rehydration, but usually slower. | |||
In order to avoid heating during exposure, leading to the formation of bubbles, it is recommended to use multiple exposure, limiting the exposure time for each cycle to 10-15s, and using a 10-15s pause between cycles. | In order to avoid heating during exposure, leading to the formation of bubbles, it is recommended to use multiple exposure, limiting the exposure time for each cycle to 10-15s, and using a 10-15s pause between cycles. | ||