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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon&action=edit click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon&action=edit click here]'''  




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==Deposition of PolySilicon using LPCVD==
==Deposition of PolySilicon using LPCVD==


Danchip has two furnaces for deposition of LPCVD (Low Chemical Vapour Deposition) polysilicon: A 6" furnace (installed in 2011) for deposition of standard polySi, amorphous polySi and boron doped polySi on 100 mm or 150 mm wafers and a 4" furnace (installed in 1995) for deposition of standard polySi, amorphous polySi, boron- and phosphorous doped polySi on 100 mm wafers. In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si (4") (B4)" and "Furnace: LPCVD Poly-Si (6") (E2)", respectively.  
DTU Nanolab has two furnaces for deposition of LPCVD (Low Chemical Vapour Deposition) polysilicon: A 6" furnace (installed in 2011) for deposition of standard polySi, amorphous polySi and boron doped polySi on 100 mm or 150 mm wafers and a 4" furnace (installed in 1995) for deposition of standard polySi, amorphous polySi, boron- and phosphorous doped polySi on 100 mm wafers. In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si (4") (B4)" and "Furnace: LPCVD Poly-Si (6") (E2)", respectively.  


*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_polysilicon/Deposition_of_polysilicon_using_LPCVD/Standard_recipes,_QC_limits_and_results_for_the_4%22_polysilicon_furnace|Deposition of polysilicon using the 4" polysilicon furnace]]
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_polysilicon/Deposition_of_polysilicon_using_LPCVD/Standard_recipes,_QC_limits_and_results_for_the_4%22_polysilicon_furnace|Deposition of polysilicon using the 4" polysilicon furnace]]
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! General description
! General description


|LPCVD (low pressure cheimical vapour deposition) of polysilicon
|LPCVD (low pressure chemical vapour deposition) of polysilicon


| Sputter deposition of Si.
| Sputter deposition of Si.
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|
|
*undoped, boron doped:~100Å/min
*undoped, boron doped:~100Å/min
*Phospher doped:~20Å/min
*Phosphorous doped:~20Å/min
|
|
In the order of 1 Å/s, but dependendt on process parameters. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]]
In the order of 1 Å/s, but dependent on process parameters. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]]
| About 5 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]]
| About 5 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]]
| Depends on process parameters, roughly 1 Å/s.  
| Depends on process parameters, roughly 1 Å/s.  
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