Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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| Sputter deposition of Si. | | Sputter deposition of Si. | ||
| E-beam evaporation of Si. | | E-beam evaporation of Si. | ||
|Plasma Enhanced Chemical Vapor Deposition. | |||
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|None | |None | ||
|None | |None | ||
|Yes, B and P | |||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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|None | |None | ||
|RF Ar clean | |RF Ar clean | ||
| | |||
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|10Å to 2500Å | |10Å to 2500Å | ||
|few nm to ~500nm | |||
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| Depends on process parameters, roughly 1 Å/s. | | Depends on process parameters, roughly 1 Å/s. | ||
|1Å/s to 5Å/s (see below). | |1Å/s to 5Å/s (see below). | ||
|~6Å/s can probably be higher | |||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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|Wafers can be heated to 100-200°C | |Wafers can be heated to 100-200°C | ||
|20-250 <sup>o</sup>C | |20-250 <sup>o</sup>C | ||
|300 <sup>o</sup>C | |||
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| | | | ||
|Poor | |Poor | ||
|Medium | |||
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| | | | ||
|Not tested, but do not deposit on top of silicon | |||
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* 2" | * 2" | ||
* chips | * chips | ||
| | |||
* Several small samples | |||
* 1-2x 50 mm wafer | |||
* 1x 100 mm wafer | |||
* 1x 150 mm wafer | |||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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* Silicon wafers | * Silicon wafers | ||
* Resists | * Resists | ||
| | |||
See the cross contamination sheet for PECVD3 | |||
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|Only in PECVD3 | |||
|} | |} | ||