Specific Process Knowledge/Etch/Aluminum Oxide: Difference between revisions

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Etching Al₂O₃ can be done both chemically (wet) and by dry etching. Chemical etching can be done using HF or a developer. The last has not been tested. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of Al₂O₃ in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.

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-Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically and by dry etching. We have not tested a chemical etch but a possibility could be to use a developer. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP. Please see links below.
+Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching.
+Chemical etching can be done using HF or a developer. The last has not been tested. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min.
+We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.
-*[[/Al2O3 Etch with ICP Metal|Al2O3 etch using ICP metal]]
+*[[/Al2O3 Etch with ICP Metal|Al<sub>2</sub>O<sub>3</sub> etch using ICP metal]]
-*[[/Al2O3 Etch with III-V ICP|Al2O3 etch using III-V ICP]]
+*[[/Al2O3 Etch with III-V ICP|Al<sub>2</sub>O<sub>3</sub> etch using III-V ICP]]
+*[[/Al2O3 Etch using HF|Al<sub>2</sub>O<sub>3</sub> etch using HF]]