Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4: Difference between revisions
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[[Image:Twinx.jpg |frame|left|x300px|The twin Pegasi (3 and 4) have just been rolled into the lab on July 3rd 2018. ]] | [[Image:Twinx.jpg |frame|left|x300px|The twin Pegasi (3 and 4) have just been rolled into the lab on July 3rd 2018. ]] | ||
'''Feedback to this page: | |||
[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus click here]''' | |||
[[Category: Equipment |Etch DRIE]] | |||
[[Category: Etch (Dry) Equipment|DRIE]] | |||
= DRIE-Pegasus 1= | |||
[[Image:DRIE-Pegasus.jpg |frame|left|x300px|The DRIE-Pegasus 1 load lock and cassette loader in the Nanolab cleanroom A-1]] | |||
'''The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:''' | |||
Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=265| LabManager] | |||
== Process information == | |||
'''[[Specific Process Knowledge/Etch/DRIE-Pegasus/StandardRecipes|Standard recipes]]''' | |||
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/processA|Process A (Large trench): 80 µm wide trench etched down to a depth of 150 µm]] | |||
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/processB|Process B (Via etch): 30 µm diameter via etched down to a depth of 100 µm]] | |||
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/processC|Process C (Nano etch): 50-300 nm posts]] | |||
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/processD|Process D (Micro stamp) ''Please note that this process has changed'' ]] | |||
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/SOIetch|SOI etch]] | |||
'''Hardware changes''' | |||
A few hardware modifications have been made on the Pegasus since it was installed in 2010. The changes are listed below. | |||
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange|Change of showerhead in December 2014]] | |||
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/picoscope|Addition of Picoscope oscilloscope system for process monitoring in February 2017]] | |||
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/Claritas|Addition of a Claritas optical endpoint system in June 2018]] | |||
=== Other etch processes === | |||
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch|Continuous nanostructure etches including nano1.42]] | |||
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/DUVetch|Etch processes with DUV masks]] | |||
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/Barc|BARC etches]] | |||
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/Isotropic|Isotropic etches]] | |||
More processes, such as for DUV resist, are currently being developed, but they are not quite 'ready for publication' at LabAdviser so please contact Jonas (mailto:jmli@dtu.dk) for more information. | |||
<!-- *[[Specific Process Knowledge/Etch/DRIE-Pegasus/slopedsidewalls|Etches that produce positively sloped sidewalls for imprinting purposes]] --> | |||
<!-- *[[Specific Process Knowledge/Etch/DRIE-Pegasus/Waferthinning| Maskless reduction of wafer thicknesses]] --> | |||
<!-- *[[Specific Process Knowledge/Etch/DRIE-Pegasus/VeeryDeeep| Very deep etching]] --> | |||
=== Advanced Processing - Henri Jansen style === | |||
* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Etch silicon nanostructures|Etch silicon nanostructures ]] | |||
* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Etch high aspect ratio silicon microstructures|Etch high aspect ratio silicon microstructures ]] | |||
* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Etch 3 dimensional silicon microstructures|Etch 3 dimensional silicon microstructures]] | |||
* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Etch black silicon|Etch black silicon]] | |||
* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Using OES to monitor etch process|Using OES to monitor etch process]] | |||
=== Wafer bonding === | |||
To find information on how to bond wafers or chips to a carrier wafer, click [[Specific Process Knowledge/Etch/DryEtchProcessing/Bonding| here]]. | |||
=== Acceptance test === | |||
The instrument was opened for users in April 2010 when the acceptance test was signed. This was based on the performance of five standard recipes (A, B, C, D and SOI) that are further examined below. The acceptance test report is found [[Media:Pegasus_AcceptanceTest.pdf|here]]. | |||
'''Characterisation of etched trenches''' | |||
Comparing differences in etched trenches requires a set of common parameters for each trench. Click [[Specific Process Knowledge/Etch/DRIE-Pegasus/TrenchCharacterisation|'''HERE''']] to find more information about the parameters used on the DRIE-Pegasus process development. | |||
'''Internal Nanolab Process log for Pegasus 1''' | |||
Process log at Nanolab [http://labintra.nanolab.dtu.dk/index.php/Main_Page/Process_Logs/jmli/Pegasus] | |||