Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing: Difference between revisions
| Line 242: | Line 242: | ||
*SAT results? | *SAT results? | ||
'''Exposed on mask blank with AZ1500 (possibly S1800) at DTU, then transferred via wet chrome etch and measured at Heidelberg''' | Acceptance criteria: Width of smallest resolved line 600±100 nm, alignment error 500 nm, writing speed 285 mm<sup>2</sup>/min. | ||
'''Exposed on mask blank with 0.5 µm AZ1500 (possibly S1800) at DTU, then transferred via wet chrome etch and measured at Heidelberg''' | |||
{|border="1" cellspacing="0" cellpadding="3" style="text-align:center;" | {|border="1" cellspacing="0" cellpadding="3" style="text-align:center;" | ||