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Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing: Difference between revisions

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[[Image:MLA150_intensityVSaperture.JPG|400x400px|thumb|The exposure intensity of Aligner: Maskless 02 as a function of the high AR mode aperture setting]]
[[Image:MLA150_intensityVSaperture.JPG|400x400px|thumb|The exposure intensity of Aligner: Maskless 02 as a function of the high AR mode aperture setting]]


In High AR mode, the aperture size is controlled via a parameter in the resist template. The high AR parameter can be Standard (aperture fully open; 800 motor steps), Large (100 steps), or X-Large (60 steps). Assuming a linear relation between motor steps and aperture diameter, Large corresponds to a relative aperture area of 1.6%, while X-Large corresponds to 0.6% aperture area. Intensity measurements show a relative intensity of approximately 25%, and 6%, respectively. The effective dose can be corrected by increasing the nominal dose in the exposure, either by a fixed machine parameter, or by the user setting a higher dose themselves. At the moment, the user will be required to increase the nominal dose.
The aperture size is controlled via a parameter in the resist template. The high AR parameter can be Standard (aperture fully open; 800 motor steps), Large (100 steps), or X-Large (60 steps).
 
*Standard: No resist template or any normal resist template
*Standard: No resist template or any normal resist template
*Large: 'NLAB High AR mode Large'
*Large: 'NLAB High AR mode Large'
*X-Large: 'NLAB High AR mode XL'
*X-Large: 'NLAB High AR mode XL'
Assuming a linear relation between motor steps and aperture diameter, Large corresponds to a relative aperture area of 1.6%, while X-Large corresponds to 0.6% aperture area. Intensity measurements show a relative intensity of approximately 25%, and 6%, respectively. The effective dose can be corrected by increasing the nominal dose in the exposure, either by a fixed machine parameter, or by the user setting a higher dose themselves. At the moment, the user will be required to increase the nominal dose.


Decreasing the aperture size significantly reduces the amount of light that reaches the sample, and thus the effective dose, as can be seen in the graph to the right, and the table below. The resolution limit, however, seem to be much less affected. Tests using 1.5µm MiR resist suggest that using the X-Large setting (60 steps) reduces the achievable resolution from 1µm at Standard setting to 3µm for exposure at 375nm, but only to 1.75µm for exposure at 405nm.
Decreasing the aperture size significantly reduces the amount of light that reaches the sample, and thus the effective dose, as can be seen in the graph to the right, and the table below. The resolution limit, however, seem to be much less affected. Tests using 1.5µm MiR resist suggest that using the X-Large setting (60 steps) reduces the achievable resolution from 1µm at Standard setting to 3µm for exposure at 375nm, but only to 1.75µm for exposure at 405nm.
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