Specific Process Knowledge/Etch/DRIE-Pegasus/Etch silicon nanostructures: Difference between revisions
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| [[Image:DREM2pic1.jpg |frame|x300px|200nm trenches etched with 100 cycles (cross section view)]] | | [[Image:DREM2pic1.jpg |frame|x300px|200nm trenches etched with 100 cycles (cross section view)]] | ||
| [[Image:DREM2pic2.jpg |frame|x300px|200nm pillars etched with 100 cycles (cross section view)]] | | [[Image:DREM2pic2.jpg |frame|x300px|200nm pillars etched with 100 cycles (cross section view)]] | ||
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| [[Image:DREM2pic3.jpg |frame|x300px|200nm pillars etched with 100 cycles (tilted view)]] | | [[Image:DREM2pic3.jpg |frame|x300px|200nm pillars etched with 100 cycles (tilted view)]] | ||
| [[Image:DREM2pic4.jpg |frame|x300px|Pillars etched with 100 cycles, patterns defined with EBL and ZEP resist, smallest dimesion of 100nm (tilted view)]] | | [[Image:DREM2pic4.jpg |frame|x300px|Pillars etched with 100 cycles, patterns defined with EBL and ZEP resist, smallest dimesion of 100nm (tilted view)]] | ||
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