Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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*Si<sub>3</sub>N<sub>4</sub> | *Si<sub>3</sub>N<sub>4</sub> | ||
*SRN | *SRN | ||
SRN: Silicon | Si<sub>3</sub>N<sub>4</sub>: Stoichiometric nitride | ||
SRN: Silicon rich nitride (low stress nitride) | |||
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!style="background:silver; color:black" align="left" valign="top" rowspan=" | !style="background:silver; color:black" align="left" valign="top" rowspan="4"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å | *Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å | ||
*SRN: ~50Å - ~10000Å | *SRN: ~50Å - ~10000Å | ||
Thicker layers can be deposited over more runs | |||
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|style="background:LightGrey; color:black"|Step coverage | |style="background:LightGrey; color:black"|Step coverage | ||
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*Dense film | *Dense film | ||
*Few defects | *Few defects | ||
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|style="background:LightGrey; color:black"|Uniformity | |||
|style="background:WhiteSmoke; color:black"| | |||
New nitride furnace: | |||
*Uniformity within wafer: ~ 3% | |||
*Wafer-to-wafer uniformity: ~ 3% | |||
*Run-to-run uniformity: ~ 3% | |||
Old nitride furnace: | |||
* | |||
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!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *780-835 <sup>o</sup>C | ||
The process temperature depends on the actual process | |||
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|style="background:LightGrey; color:black"|Process pressure | |style="background:LightGrey; color:black"|Process pressure | ||
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|style="background:LightGrey; color:black"|Gas flows | |style="background:LightGrey; color:black"|Gas flows | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*SiH<math>_2</math>Cl<math>_2</math>:10- | *Dichlorsilane (SiH<math>_2</math>Cl<math>_2</math>): 10-120 sccm | ||
*NH<math>_3</math>:10-75 sccm | *Ammonia (NH<math>_3</math>): 10-75 sccm | ||
The gas flows depends on the actual process | |||
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!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
New nitride furnace: | |||
*1-25 4" or 6" wafers per run | |||
Old nitride furnace: | |||
*1-25 4" wafer per run | *1-25 4" wafer per run | ||
*Deposition on both sides of the substrate | *Deposition on both sides of the substrate | ||
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| style="background:LightGrey; color:black"|Substrate material allowed | | style="background:LightGrey; color:black"|Substrate material allowed | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon wafers (new from | *Silicon wafers (new wafer from new box or RCA cleaned wafers) | ||
**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | **with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | ||
**from furnaces in stack A or B in cleanroom 2 | |||
*Quartz wafers (RCA cleaned) | *Quartz wafers (RCA cleaned) | ||
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