Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
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yannickseis@nbi.ku nov. 2017 @80 °C: | yannickseis@nbi.ku nov. 2017 @80 °C: | ||
*BPSG from PECVD4: 311nm in about 3 min | *BPSG from PECVD4: 311nm in about 3 min | ||
*Waveguide oxide from PECVD4: 320nm etched in 26 min | *Waveguide oxide from PECVD4: 320nm etched in 26 min | ||
*TEOS oxide from furnace: 300nm etched in 11 min | *TEOS oxide from furnace: 300nm etched in 11 min | ||
jemafh@nilt 2019-Marts: | |||
*Standard from PECVD3: selectivity 1:100 to Si | |||
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