Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions
| Line 2: | Line 2: | ||
==Deposition of Silicon Nitride using LPCVD== | ==Deposition of Silicon Nitride using LPCVD== | ||
LPCVD silicon nitride can be made in a [[Specific Process Knowledge/Thin film deposition/B2 Furnace LPCVD Nitride|LPCVD nitride furnace]]. Danchip has two LPCVD nitride furnaces: A new furnace for deposition of stoichiometric nitride on 4 | LPCVD silicon nitride can be made in a [[Specific Process Knowledge/Thin film deposition/B2 Furnace LPCVD Nitride|LPCVD nitride furnace]]. Danchip has two LPCVD nitride furnaces: A new furnace for deposition of stoichiometric nitride on 4" or on 6" wafers and an older furnace for deposition of stoichiometric nitride and low stress nitride on 4" wafers. | ||
The LPCVD nitride deposition is a batch process, meaning that you can run a batch of 25-35 wafers at a time. The deposition takes place at temperatures of 780-850 degrees Celsius. The LPCVD silicon nitride has a good step coverage, and the film thickness is very uniform over the wafers. On the furnaces we have standard processes for deposition of stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and for deposition of low stress nitride (SNR). | The LPCVD nitride deposition is a batch process, meaning that you can run a batch of 25-35 wafers at a time. The deposition takes place at temperatures of 780-850 degrees Celsius. The LPCVD silicon nitride has a good step coverage, and the film thickness is very uniform over the wafers. On the furnaces we have standard processes for deposition of stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and for deposition of low stress nitride (SNR). | ||