Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing: Difference between revisions
Appearance
| Line 81: | Line 81: | ||
==Exposure mode== | ==Exposure mode== | ||
Aligner: Maskless 02 offers two exposure modes | Aligner: Maskless 02 offers two exposure modes. | ||
'''High quality (4) | '''High quality (4)''' mode is used for optimal resolution and minimum stripe stitching effects. | ||
In the high quality mode, an area of the pattern is exposed by 4 stripes, each 160µm wide and exposing a quarter of the dose. At the same time, sub-pixel interpolation is applied, yielding an address grid size of 40nm. | In the high quality mode, an area of the pattern is exposed by 4 stripes, each 160µm wide and exposing a quarter of the dose. At the same time, sub-pixel interpolation is applied, yielding an address grid size of 40nm. | ||
'''Fast | '''Fast''' mode is used for maximum exposure speed. | ||
In the fast mode, each area of the pattern is exposed by 2 stripes only. This effectively cuts the exposure time in half, but also doubles the size of the address grid in the X-direction. Due to less averaging of non-uniformities, stitching effects will be more prominent in this mode. | In the fast mode, each area of the pattern is exposed by 2 stripes only. This effectively cuts the exposure time in half, but also doubles the size of the address grid in the X-direction. Due to less averaging of non-uniformities, stitching effects will be more prominent in this mode. | ||