Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions

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Aluminium Anneal furnace (C4)

The Aluminium Anneal furnace (C4) is a Tempress horizontal furnace for annealing of silicon wafers with aluminium or ALD oxides Al₂O₃ and TiO₂.

This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom B-1. In this furnace allowed to process wafers that contain aluminium. Please check the cross contamination information in LabManager before you use the furnace.

The user manual, technical information and contact information can be found in LabManager:

Aluminium Anneal furnace (C4)

Process knowledge

Annealing: look at the Annealing page

Overview of the performance of Aluminium Anneal furnace and some process related parameters

Purpose		Annealing of wafers with aluminium
Process parameter range	Process Temperature	400-500 ^oC
	Process pressure	1 atm
	Gas flows	N₂: 0-10 slm
Substrates	Batch size	1-30 100 mm wafers (or 50 mm wafers)
Substrates	Substrate materials allowed	Silicon wafers with aluminium. Silicon wafers with Al₂O₃ and TiO₂ deposited by ALD Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone

@@ Line 50: / Line 50: @@
 |style="background:WhiteSmoke; color:black"|
 *Silicon wafers with aluminium.
-*Silicon wafers with ALD oxides Al2O<sub>3<{sub> and TiO<sub>2</sub>
+*Silicon wafers with Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD
 *Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone
 |-
 |}