Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing: Difference between revisions
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[[Image:MLA150_intensityVSaperture.JPG|300x300px|thumb|The exposure intensity of Aligner: Maskless 02 as a function of the high AR mode aperture setting]] | [[Image:MLA150_intensityVSaperture.JPG|300x300px|thumb|The exposure intensity of Aligner: Maskless 02 as a function of the high AR mode aperture setting]] | ||
Decreasing the aperture size significantly reduces the amount of light that reaches the sample, and thus the effective dose, as can be seen in the graph to the right, and the table below. The resolution, however, seem | In High AR mode, the aperture size is controlled via a parameter in the resist template. The high AR parameter can be Standard (aperture fully open; 800 motor steps), Large (100 steps), or X-Large (60 steps). Assuming a linear relation between motor steps and aperture diameter, Large corresponds to a relative aperture area of 1.6%, while X-Large corresponds to 0.6% aperture area. Intensity measurements show a relative intensity of approximately 25%, and 6%, respectively. The effective dose can be corrected by increasing the nominal dose in the exposure, either by a fixed machine parameter, or by the user setting a higher dose themselves. At the moment, the user will be required to increase the nominal dose. | ||
Decreasing the aperture size significantly reduces the amount of light that reaches the sample, and thus the effective dose, as can be seen in the graph to the right, and the table below. The resolution limit, however, seem to be much less affected. Tests using 1.5µm MiR resist suggest that using the X-Large setting (aperture: 60 steps) reduces the achievable resolution from 1µm at standard setting (fully open; 800 steps) to 3µm for exposure at 375nm, and only 1.75µm for exposure at 405nm. | |||
'''Dose factor for different wavelengths and aperture settings:''' | '''Dose factor for different wavelengths and aperture settings:''' | ||