Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing: Difference between revisions
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==Defocus== | ==Defocus== | ||
==High Aspect Ratio Mode== | |||
*Intensity vs. aperture (405nm + 375nm) | |||
*Dose test for 1.5µm MiR (405nm + 375nm) | |||
==Writing speed== | ==Writing speed== | ||
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At the end of substrate detection, the sample is scanned twice along the flat (bottom side for chips/plates), in order to determine the substrate rotation. This angle will be presented in the exposure panel along with the option to expose the design rotated in order to compensate for this angle, i.e. aligned to the flat. | At the end of substrate detection, the sample is scanned twice along the flat (bottom side for chips/plates), in order to determine the substrate rotation. This angle will be presented in the exposure panel along with the option to expose the design rotated in order to compensate for this angle, i.e. aligned to the flat. | ||
==Labelling== | ==Labelling== | ||