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Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE: Difference between revisions

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BGE (talk | contribs)
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Etch cycle
Etch cycle
SF6 flow [sccm]:50
*SF6 flow [sccm]:50
C4F8 flow [sccm]:100
*C4F8 flow [sccm]:100
Pressure [mTorr] 20
*Pressure [mTorr] 20
Coil power [W]: 350
*Coil power [W]: 350
Platen power [W]: 30
*Platen power [W]: 30
Cycle Time [s]: 5
*Cycle Time [s]: 5
Dep. Cycle
Dep. Cycle
C4F8 flow [sccm]: 100
*C4F8 flow [sccm]: 100
Pressure [mTorr]: 20
*Pressure [mTorr]: 20
Coil power [W]: 500
*Coil power [W]: 500
Platen power [W]: 0
*Platen power [W]: 0
Cycle Time [s]: 3
*Cycle Time [s]: 3
Temperature [Deg. C] 20
*Temperature [Deg. C] 20
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Etch cycle
Etch cycle
SF6 flow [sccm]:50
*SF6 flow [sccm]:50
C4F8 flow [sccm]:100
*C4F8 flow [sccm]:100
Pressure [mTorr] 10
*Pressure [mTorr] 10
Coil power [W]: 350
*Coil power [W]: 350
Platen power [W]: 30
*Platen power [W]: 30
Cycle Time [s]: 5
*Cycle Time [s]: 5
Dep. Cycle
Dep. Cycle
C4F8 flow [sccm]: 100
*C4F8 flow [sccm]: 100
Pressure [mTorr]: 10
*Pressure [mTorr]: 10
Coil power [W]: 500
*Coil power [W]: 500
Platen power [W]: 0
*Platen power [W]: 0
Cycle Time [s]: 3
*Cycle Time [s]: 3
Temperature [Deg. C] -10
*Temperature [Deg. C] -10
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Etch cycle
Etch cycle
SF6 flow [sccm]:50
*SF6 flow [sccm]:50
C4F8 flow [sccm]:100
*C4F8 flow [sccm]:100
Pressure [mTorr] 10
*Pressure [mTorr] 10
Coil power [W]: 350
*Coil power [W]: 350
Platen power [W]: 10
*Platen power [W]: 10
Cycle Time [s]: 5
*Cycle Time [s]: 5
Dep. Cycle
Dep. Cycle
C4F8 flow [sccm]: 100
*C4F8 flow [sccm]: 100
Pressure [mTorr]: 10
*Pressure [mTorr]: 10
Coil power [W]: 500
*Coil power [W]: 500
Platen power [W]: 0
*Platen power [W]: 0
Cycle Time [s]: 3
*Cycle Time [s]: 3
Temperature [Deg. C] 20
*Temperature [Deg. C] 20
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