Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic: Difference between revisions
No edit summary |
|||
| Line 35: | Line 35: | ||
| 20 <!--Temperature --> | | 20 <!--Temperature --> | ||
| - <!--Process time (needed if ramping is enabled) --> | | - <!--Process time (needed if ramping is enabled) --> | ||
| | | 20 <!--Pressure --> | ||
| - <!--Process chamber setup --> | | - <!--Process chamber setup --> | ||
| | | 90 <!--SF6 flow --> | ||
| 0 <!--O2 flow --> | | 0 <!--O2 flow --> | ||
| 0 <!--C4F8 flow --> | | 0 <!--C4F8 flow --> | ||
Revision as of 11:43, 11 July 2019
Isotropic etching in silicon on the ICP Metal Etch
| Recipe | Step | Temp. | Time | Pres. | Hardware | Gasses | RF powers | Observations | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SF6 | O2 | C4F8 | Ar | CF4 | H2 | CH4 | BCl3 | Cl2 | HBr | Coil | Platen | SEM images of different runs | Keywords | ||||||
| isoslow1 | A | 20 | - | 20 | - | 90 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 400 | 3 | Click HERE! | NA |