Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy: Difference between revisions
Appearance
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! Equipment | ! Equipment | ||
![[Specific Process Knowledge/Characterization/SEM Inspect S|SEM Inspect S]] | <!-- ![[Specific Process Knowledge/Characterization/SEM Inspect S|SEM Inspect S]] --> | ||
![[Specific Process Knowledge/Characterization/SEM FEI Nova 600 NanoSEM|SEM FEI Nova 600 NanoSEM]] | ![[Specific Process Knowledge/Characterization/SEM FEI Nova 600 NanoSEM|SEM FEI Nova 600 NanoSEM]] | ||
![[Specific Process Knowledge/Characterization/SEM FEI Quanta 200 ESEM FEG|SEM FEI | ![[Specific Process Knowledge/Characterization/SEM FEI Quanta 200 ESEM FEG|SEM FEI QFEG 200 Cryo ESEM]] | ||
![[Specific Process Knowledge/Characterization/SEM FEI QUANTA 200 3D|FIB-SEM FEI QUANTA 200 3D]] | <!-- ![[Specific Process Knowledge/Characterization/SEM FEI QUANTA 200 3D|FIB-SEM FEI QUANTA 200 3D]] --> | ||
![[Specific Process Knowledge/Characterization/Dual Beam FEI Helios Nanolab 600|Dual Beam FEI Helios Nanolab 600]] | ![[Specific Process Knowledge/Characterization/Dual Beam FEI Helios Nanolab 600|Dual Beam FEI Helios Nanolab 600]] | ||
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!Purpose | !Purpose | ||
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*Conductive samples in High Vac | *Conductive samples in High Vac | ||
*Charge reduction in Low Vac | *Charge reduction in Low Vac | ||
*X Ray Analysis with EDS and WDS | *X Ray Analysis with EDS and WDS --> | ||
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*Conductive samples in High Vac | *Conductive samples in High Vac | ||
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*Cryogenic sample fixing/stabilization using cryo stage | *Cryogenic sample fixing/stabilization using cryo stage | ||
*X Ray Analysis with EDS | *X Ray Analysis with EDS | ||
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*Conductive samples in High Vac | *Conductive samples in High Vac | ||
*Charge reduction in Low Vac | *Charge reduction in Low Vac | ||
*Micro and Nano milling/fabrication using various gases and FIB | *Micro and Nano milling/fabrication using various gases and FIB --> | ||
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*Conductive samples in High Vac | *Conductive samples in High Vac | ||
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!Equipment position | !Equipment position | ||
<!-- |CEN Building 314 --> | |||
|CEN Building 314 | |CEN Building 314 | ||
|CEN Building 314 | |CEN Building 314 | ||
<!-- |CEN Building 307 Room 111 --> | |||
|CEN Building 307 Room 111 | |||
|CEN Building 314 | |CEN Building 314 | ||
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|style="background:Whitesmoke; color:black" colspan="5" align="center"| The resolution of a SEM is strongly dependent on sample type and the operator. Resolution quoted is using sputtered gold on carbon | |style="background:Whitesmoke; color:black" colspan="5" align="center"| The resolution of a SEM is strongly dependent on sample type and the operator. Resolution quoted is using sputtered gold on carbon | ||
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* High-vacuum | * High-vacuum | ||
•3.0nm at 30kV (SE) | •3.0nm at 30kV (SE) | ||
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•3.0nm at 30kV (SE) | •3.0nm at 30kV (SE) | ||
• 4.0nm at 30kV (BSE) | • 4.0nm at 30kV (BSE) | ||
• > 12nm at 3kV (SE) | • > 12nm at 3kV (SE) --> | ||
|B | |B | ||
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* Extended vacuum mode (ESEM) | * Extended vacuum mode (ESEM) | ||
•1.4 nm at 30 kV (SE) | •1.4 nm at 30 kV (SE) | ||
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* Electron Column | * Electron Column | ||
•5nm @30kV | •5nm @30kV | ||
* Ion Column | * Ion Column | ||
•7nm @ 30kV | •7nm @ 30kV --> | ||
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* Electron Column | * Electron Column | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
!Detectors | !Detectors | ||
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*ETD Secondary Electrons | *ETD Secondary Electrons | ||
*BSED Back Scatter Electrons | *BSED Back Scatter Electrons | ||
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*EDS X Ray by energy | *EDS X Ray by energy | ||
*WDS X Ray by wavelength | *WDS X Ray by wavelength | ||
*STEM Scanning Transmission Electron Microscopy | *STEM Scanning Transmission Electron Microscopy --> | ||
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*ETD/TLD Secondary Electrons | *ETD/TLD Secondary Electrons | ||
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*EDS X Ray by energy | *EDS X Ray by energy | ||
*STEM Scanning Transmission Electron Microscopy | *STEM Scanning Transmission Electron Microscopy | ||
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*ETD Secondary Electrons | *ETD Secondary Electrons | ||
*BSED Back Scatter Electrons | *BSED Back Scatter Electrons | ||
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*STEM Scanning Transmission Electron Microscopy | *STEM Scanning Transmission Electron Microscopy | ||
*GAD Low VAC BSED | *GAD Low VAC BSED | ||
*GSED ESEM SE | *GSED ESEM SE --> | ||
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*ETD/TLD Secondary Electrons | *ETD/TLD Secondary Electrons | ||
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!Stage specifications | !Stage specifications | ||
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* X 50mm | * X 50mm | ||
* Y 50mm | * Y 50mm | ||
* Z 50mm | * Z 50mm | ||
* R 360⁰ | * R 360⁰ | ||
* T 70⁰ Manual | * T 70⁰ Manual --> | ||
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* X 150mm Piezo | * X 150mm Piezo | ||
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* R 360⁰ | * R 360⁰ | ||
* T 70⁰ Manual | * T 70⁰ Manual | ||
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* X 100mm | * X 100mm | ||
* Y 100mm | * Y 100mm | ||
* Z 50mm | * Z 50mm | ||
* R 360⁰ | * R 360⁰ | ||
* T 70⁰ | * T 70⁰ --> | ||
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* X 150mm Piezo | * X 150mm Piezo | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
!Options | !Options | ||
| A | <!-- | A --> | ||
| B | | B | ||
| C | | C | ||
| D | <!-- | D --> | ||
| E | | E | ||
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