Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions
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PEB: 60s @ 110°C | PEB: 60s @ 110°C | ||
Development: SP 30s. For lift-off SP 60s (sidewall angle ~15°) | Development: SP 30s. For lift-off, use SP 60s (sidewall angle ~15°) | ||
*'''1.5µm AZ MiR 701''' | *'''1.5µm AZ MiR 701''' | ||
PEB: 60s @ 110°C | PEB: 60s @ 110°C | ||
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Development: SP 60s | Development: SP 60s | ||
*'''2.2µm AZ 5214E''' (image reversal) | *'''2.2µm AZ 5214E''' (image reversal) | ||
Reversal bake: | Reversal bake: 120s @ 110°C | ||
Flood exposure: ~200 mJ/cm<sup>2</sup> | Flood exposure: ~200 mJ/cm<sup>2</sup> | ||