Jump to content

Specific Process Knowledge/Doping: Difference between revisions

Thope (talk | contribs)
Jmli (talk | contribs)
No edit summary
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Doping click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Doping click here]'''
<!-- Replace "http://labadviser.danchip.dtu.dk/..." wih the link to the Labadviser page-->
<!-- Replace "http://labadviser.nanolab.dtu.dk/..." with the link to the Labadviser page-->


<br clear="all" />
<br clear="all" />
Line 6: Line 6:
== Doping your wafer ==
== Doping your wafer ==


This page is about doping your wafer or making a thin film layer doped with boron, phosphorous or germanium. The links below direct you to various doping results achieved by the use of different processes and heat treatments.
This page is about doping your wafer or making a thin film layer doped with boron, phosphorus or germanium. The links below direct you to various doping results achieved by the use of different processes and heat treatments.


*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Doping with Phosphorous using high temperature furnaces]] - Doping silicon wafers with phosphorous by thermal pre-deposition and drive-in
*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Doping with Phosphorous using high temperature furnaces]] - Doping silicon wafers with phosphorus by thermal pre-deposition and drive-in
*[[Specific Process Knowledge/Thermal Process/Dope with Boron|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in
*[[Specific Process Knowledge/Thermal Process/Dope with Boron|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in
*[[Specific Process Knowledge/Thermal Process/Oxide mask|Oxide mask thickness]] - Required oxide mask thickness for pre deposition and diffusion
*[[Specific Process Knowledge/Thermal Process/Oxide mask|Oxide mask thickness]] - Required oxide mask thickness for pre deposition and diffusion
*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorous
*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorus
*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorous glass (PBSG)  
*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorus glass (PBSG)  
*Ion implantation (not possible at Danchip)
*Ion implantation (not possible at Danchip)