Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal: Difference between revisions

Revision as of 14:12, 18 August 2021

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Parameter	Recipe name: no name (testing recipe)
Coil Power [W]	1200
Platen Power [W]	200
Platen temperature [^oC]	0
BCl3 flow [sccm]	60
Cl₂ flow [sccm]	30
Pressure [mTorr]	4

Material to be etched	Etch rate using the above parameters
Al2O3	~93nm/min (30s, 1/4 wafer on 6" carrier) 2017-01-20 bghe@nanolab

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