Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions

Revision as of 13:50, 18 August 2021

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Material	Density	Z ratio
Material parameters for using the crystal monitors
TiO₂	4.260	0.400
SiO₂	2.648	1.000
Si	2.320	0.712

Date	Tooling factor: TiO₂	Tooling factor: SiO₂	Tooling factor: Si
Settings for Crystal thickness monitor 1
2014-07-22	157.3% (wafer center)
2015-09-08	132 %	B2	B3
C	C1	C2	C3
D	D1	D2	D3

Date	Tooling factor: TiO₂	Tooling factor: SiO₂	Tooling factor: Si
Settings for crystal thickness monitor 2
A	A1	A2	A3
B	B1	B2	B3
C	C1	C2	C3
D	D1	D2	D3

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	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Crystal_Settings click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Crystal_Settings click here]'''

	[[Image:Tooling_factor.jpg\|700px\|right\|thumb\|How to calculate the tooling factor. Taken from the manufacture manual]]		[[Image:Tooling_factor.jpg\|700px\|right\|thumb\|How to calculate the tooling factor. Taken from the manufacture manual]]