Specific Process Knowledge/Etch/III-V ICP/SiO2: Difference between revisions
No edit summary |
No edit summary |
||
| Line 37: | Line 37: | ||
|Etch rate in thermal oxide | |Etch rate in thermal oxide | ||
|'''48nm/min''' (bghe 17-01-2017)- whole 4" wafer with capton tape | |'''48nm/min''' (bghe 17-01-2017)- whole 4" wafer with capton tape | ||
|'''40-50 nm/min''' bghe (2019-2021 5 tests) | |||
|- | |- | ||
|Selectivity to resist [:1] | |Selectivity to resist [:1] | ||
| Line 48: | Line 49: | ||
|- | |- | ||
|Wafer uniformity (100mm) | |Wafer uniformity (100mm) | ||
| | |+-0.4%-0.8% ((max-min)/2*Average) (bghe 2019-2021 5 tests) | ||
|- | |- | ||
|Profile [<sup>o</sup>] | |Profile [<sup>o</sup>] | ||