Specific Process Knowledge/Wafer cleaning: Difference between revisions
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*[[/7-up|7-up]] - ''Fake piranha etch of wafers and masks - removes organics and alkali ions'' | *[[/7-up|7-up]] - ''Fake piranha etch of wafers and masks - removes organics and alkali ions'' | ||
*[[/Piranha|Piranha]] - ''Removes organics and alkali ions'' | *[[/Piranha|Piranha]] - ''Removes organics and alkali ions'' | ||
*[[/cleaning with | *[[/cleaning with HF|5% HF]] - ''Removing native oxide, etching of predep glass etc.'' | ||
*[[/IMEC|IMEC]] - ''Cleaning before fusion bonding'' | *[[/IMEC|IMEC]] - ''Cleaning before fusion bonding'' | ||
*[[/Cleaning with Soap Sonic|Soap Sonic]] - ''Cleaning of "dirty" wafers when entering the cleanroom'' | *[[/Cleaning with Soap Sonic|Soap Sonic]] - ''Cleaning of "dirty" wafers when entering the cleanroom'' | ||
Revision as of 11:06, 11 February 2008
Clean with:
- RCA - Two step process to remove organics and metals
- 7-up - Fake piranha etch of wafers and masks - removes organics and alkali ions
- Piranha - Removes organics and alkali ions
- 5% HF - Removing native oxide, etching of predep glass etc.
- IMEC - Cleaning before fusion bonding
- Soap Sonic - Cleaning of "dirty" wafers when entering the cleanroom