Specific Process Knowledge/Back-end processing/Polisher CMP: Difference between revisions

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*one 2" wafer
*one 2" wafer
*one 100 mm wafer
*one 100 mm wafer
*one 150mm wafer
*one 150 mm wafer
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*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> small samples

Revision as of 10:22, 29 November 2018

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Polisher (CMP)

The Logitech PM5 Polisher/Lapper

The Logitech Orbis Polisher (CMP) is for polishing wafers (removing material in the nm range) it is not for thinning down wafers or other substrates.


The user manual, user APV, technical information and contact information can be found in LabManager:

The Logitech Orbis (CMP) in LabManager


Equipment performance and process related parameters

Equipment Polisher/Lapper
Purpose

Thinning of substrates of

  • InP
  • GaAs
  • Silicon
  • Metals
  • Glass/Quartz
Performance Thinning
  • Removal rate: 1-10µm/min
  • Thickness accuracy: +/- 10 µm
  • Thickness homogeneity: +/- 10 µm
  • Roughness: +/- ? µm
Polishing
  • Removal rate: ~1 µm/min
  • Thickness accuracy: ? µm
  • Thickness homogeneity: ? µm
  • Roughness: +/- ? µm
Process parameter range Polishing liquid
  • Al2O3 (alumina) powder: 3, 9 or 20 µm
  • Chemlox (for polishing)
  • SF1 Polishing Fluid (for polishing e.g. SiO2)
Polishing cloths
  • Chemcloth Polishing Cloths (for use with SF1 liquid)
Rotation speed
  • Thinning: 5-20 rpm
  • Polishing: 5-80 rpm
Arm sweep
  • Thinning: stationary
  • Polishing: 12% (inner) - 80% (outer)
Substrates Sample size
  • one 20x20mm piece
  • one 50 mm wafer
  • one 2" wafer
  • one 100 mm wafer
  • one 150 mm wafer
Allowed materials
  • Silicon
  • Glass/Quartz