Specific Process Knowledge/Back-end processing/Polisher CMP: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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<!-- give the link to the equipment info page in LabManager: -->
<!-- give the link to the equipment info page in LabManager: -->
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=430 The Logitech Orbis (CMP) in LabManager]
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=430 The Logitech Orbis (CMP) in LabManager]
==Equipment performance and process related parameters==
{| border="2" cellspacing="0" cellpadding="2"
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black"|<b>Polisher/Lapper</b>
<!-- |style="background:WhiteSmoke; color:black"|<b>Equipment 2</b> -->
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
Thinning of substrates of
|style="background:WhiteSmoke; color:black"|
*InP
*GaAs
*Silicon
*Metals
*Glass/Quartz
<!-- |style="background:WhiteSmoke; color:black"|
*Purpose 1
*Purpose 2
*Purpose 3 -->
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"| Thinning
|style="background:WhiteSmoke; color:black"|
*Removal rate: 1-10µm/min
*Thickness accuracy: +/- 10 µm
*Thickness homogeneity: +/- 10 µm
*Roughness: +/- ? µm
<!-- |style="background:WhiteSmoke; color:black"|
*Performance range 1
*Performance range 2
*Performance range 3 -->
|-
|style="background:LightGrey; color:black"|Polishing
|style="background:WhiteSmoke; color:black"|
*Removal rate: ~1 µm/min
*Thickness accuracy: ? µm
*Thickness homogeneity: ? µm
*Roughness: +/- ? µm
<!-- |style="background:WhiteSmoke; color:black"|
*Performance range -->
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range
|style="background:LightGrey; color:black"|Polishing liquid
|style="background:WhiteSmoke; color:black"|
*Al2O3 (alumina) powder: 3, 9 or 20 µm
*Chemlox (for polishing)
*SF1 Polishing Fluid (for polishing e.g. SiO2)
|-
|style="background:LightGrey; color:black"|Polishing cloths
|style="background:WhiteSmoke; color:black"|
*Chemcloth Polishing Cloths (for use with SF1 liquid)
|-
|style="background:LightGrey; color:black"|Rotation speed
|style="background:WhiteSmoke; color:black"|
*Thinning: 5-20 rpm
*Polishing: 5-80 rpm
|-
|style="background:LightGrey; color:black"|Arm sweep
|style="background:WhiteSmoke; color:black"|
*Thinning: stationary
*Polishing: 12% (inner) - 80% (outer)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
*one 50 mm wafer
*one 100 mm wafer
<!-- |style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers -->
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*InP
*GaAs
*Silicon
*Metals
*Glass/Quartz
<!-- |style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Allowed material 2
*Allowed material 3 -->
|-
|}
<br clear="all" />

Revision as of 10:17, 29 November 2018

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Polisher (CMP)

The Logitech PM5 Polisher/Lapper

The Logitech Orbis Polisher (CMP) is for polishing wafers (removing material in the nm range) it is not for thinning down wafers or other substrates.


The user manual, user APV, technical information and contact information can be found in LabManager:

The Logitech Orbis (CMP) in LabManager


Equipment performance and process related parameters

Equipment Polisher/Lapper
Purpose

Thinning of substrates of

  • InP
  • GaAs
  • Silicon
  • Metals
  • Glass/Quartz
Performance Thinning
  • Removal rate: 1-10µm/min
  • Thickness accuracy: +/- 10 µm
  • Thickness homogeneity: +/- 10 µm
  • Roughness: +/- ? µm
Polishing
  • Removal rate: ~1 µm/min
  • Thickness accuracy: ? µm
  • Thickness homogeneity: ? µm
  • Roughness: +/- ? µm
Process parameter range Polishing liquid
  • Al2O3 (alumina) powder: 3, 9 or 20 µm
  • Chemlox (for polishing)
  • SF1 Polishing Fluid (for polishing e.g. SiO2)
Polishing cloths
  • Chemcloth Polishing Cloths (for use with SF1 liquid)
Rotation speed
  • Thinning: 5-20 rpm
  • Polishing: 5-80 rpm
Arm sweep
  • Thinning: stationary
  • Polishing: 12% (inner) - 80% (outer)
Substrates Batch size
  • # small samples
  • one 50 mm wafer
  • one 100 mm wafer
Allowed materials
  • InP
  • GaAs
  • Silicon
  • Metals
  • Glass/Quartz


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