Specific Process Knowledge/Etch/DryEtchProcessing/Comparison: Difference between revisions
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! style="background:silver; color:black" rowspan="2" | [[Specific Process Knowledge/Etch/III-V RIE |III-V RIE ]] | ! style="background:silver; color:black" rowspan="2" | [[Specific Process Knowledge/Etch/III-V RIE |III-V RIE ]] | ||
! style="background:silver; color:black" rowspan="2" | [[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]] | ! style="background:silver; color:black" rowspan="2" | [[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]] | ||
! style="background:silver; color:black" rowspan="2" | [[Specific Process Knowledge/Etch/|IBE-IBSD Ionfab300+]] | |||
|- valign="top" | |- valign="top" | ||
! style="background:silver; color:black"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-1|Pegasus 1]] | ! style="background:silver; color:black"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-1|Pegasus 1]] | ||
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| style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates | | style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates | ||
| style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs | | style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs | ||
| style="background:WhiteSmoke; color:black"| Physical Etching of all materials | |||
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! style="background:lightgrey; color:black" | Alternative/backup uses | ! style="background:lightgrey; color:black" | Alternative/backup uses | ||
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| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
| style="background:lightgrey; color:black" | | |||
|- valign="top" | |- valign="top" | ||
! rowspan="7" style="background:silver; color:black" | General description | ! rowspan="7" style="background:silver; color:black" | General description | ||
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| style="background:WhiteSmoke; color:black" | Parallel plate capacitor setup with RF power between the two electrodes | | style="background:WhiteSmoke; color:black" | Parallel plate capacitor setup with RF power between the two electrodes | ||
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | | style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | ||
| style="background:WhiteSmoke; color:black" | Ion beam etcher - sputter etches with argon ions | |||
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| style="background:lightgrey; color:black" | The electrode is oil cooled: Fixed at 20<sup>o</sup>C | | style="background:lightgrey; color:black" | The electrode is oil cooled: Fixed at 20<sup>o</sup>C | ||
| style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20<sup>o</sup>C to 180<sup>o</sup>C | | style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20<sup>o</sup>C to 180<sup>o</sup>C | ||
| style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 5<sup>o</sup>C to 60?<sup>o</sup>C | |||
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| style="background:WhiteSmoke; color:black" | No clamping | | style="background:WhiteSmoke; color:black" | No clamping | ||
| style="background:WhiteSmoke; color:black" | Mechanical clamping (weighted clamp with ceramic fingers) | | style="background:WhiteSmoke; color:black" | Mechanical clamping (weighted clamp with ceramic fingers) | ||
| style="background:WhiteSmoke; color:black" | Mechanical clamping | |||
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! style="background:lightgrey; color:black" | Gasses | ! style="background:lightgrey; color:black" | Gasses | ||
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| BCl<sub>3</sub> | | BCl<sub>3</sub> | ||
| Cl<sub>2</sub> | | Cl<sub>2</sub> | ||
|} | |||
| style="background:lightgrey; color:black" | | |||
{| | |||
| Ar | |||
| O<sub>2</sub> | |||
| CHF<sub>3</sub> | |||
|} | |} | ||
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* Coil generator | * Coil generator | ||
* Platen generator | * Platen generator | ||
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* Coil generator on plama chamber | |||
* 3 accelerator grids between plasma chamber and process chamber | |||
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| style="background:lightgrey; color:black" | Manual loading directly into process chamber | | style="background:lightgrey; color:black" | Manual loading directly into process chamber | ||
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock | | style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock | ||
| style="background:lightgrey; color:black" | Automatic loading via load lock | |||
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! style="background:WhiteSmoke; color:black" | Options | ! style="background:WhiteSmoke; color:black" | Options | ||
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* Optical endpoint detection | * Optical endpoint detection | ||
* Laser endpoint detection | * Laser endpoint detection | ||
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* SIMS endpoint detection | |||
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! style="background:silver; color:black"| Allowed materials | ! style="background:silver; color:black"| Allowed materials | ||
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* GaAs, GaN, InP, with epitaxial layers | * GaAs, GaN, InP, with epitaxial layers | ||
* Resists (at low temperature processing) | * Resists (at low temperature processing) | ||
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* Almost any material, see LabManager | |||
|- | |- | ||
|} | |} | ||