Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
Appearance
New page: Silicon nitride can be etched using either wet chemistry or dry etch equipment. Wet chemistry is mainly used to remove all the nitride on the surface (backside and frontside) of a wafer. D... |
No edit summary |
||
| Line 1: | Line 1: | ||
Silicon nitride can be etched using either wet chemistry or dry etch equipment. Wet chemistry is mainly used to remove all the nitride on the surface (backside and frontside) of a wafer. Dry etching etches one side at a time and can be used to etch structures with several masking materials. | Silicon nitride can be etched using either wet chemistry or dry etch equipment. Wet chemistry is mainly used to remove all the nitride on the surface (backside and frontside) of a wafer. Dry etching etches one side at a time and can be used to etch structures with several masking materials. | ||
* | *[[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]] | ||
*[[Etch of | *[[/Etch of Silicon Nitride using RIE|Etch of Silicon Nitride using RIE]] | ||