Specific Process Knowledge/Characterization: Difference between revisions
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*[[/PL mapper|PL mapper - ''Photoluminescence mapper'']] | *[[/PL mapper|PL mapper - ''Photoluminescence mapper'']] | ||
*[[/Lifetime scanner MDPmap|Lifetime scanner MDPmap]] | *[[/Lifetime scanner MDPmap|Lifetime scanner MDPmap]] | ||
===SEMs at CEN=== | ===SEMs at CEN=== | ||
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*[[/Probe station|Probe station]] | *[[/Probe station|Probe station]] | ||
*[[/III-V ECV-profiler|III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)]] | *[[/III-V ECV-profiler|III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)]] | ||
===Various=== | ===Various=== | ||
Revision as of 11:22, 26 October 2018
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Overview of characteristics and where to measure it
| Optical Micro- scopes | SEM (incl. EDX) | AFM | Stylus profiler | Optical profiler | Filmtek (reflec- tometer) | Ellip- someter | Thickness stylus | XPS | PL mapper | 4-point probe | Probe station | XRD | Life time scanner | Drop shape analyser | Hardness tester | Differential Scanning Calorimeter DSC | Surfscan | IR-camera | |
| Breakdown voltage | |||||||||||||||||||
| Charge carrier life time | x | ||||||||||||||||||
| Contact angle hydrophobic/hydrophillic | x | ||||||||||||||||||
| Crystallinity | x | x | |||||||||||||||||
| Deposition uniformity | x | x | x | ||||||||||||||||
| Dimensions(in plane) | x | x | (x) | (x) | x | ||||||||||||||
| Dimensions(height) | (x) | (x) | x | x | x | ||||||||||||||
| Electrical conductivity | x | ||||||||||||||||||
| Element analysis | x | x | x 4) | x 4) | |||||||||||||||
| Film stress | x | x | |||||||||||||||||
| Imaging | x | x | x | x | |||||||||||||||
| Material Hardness | x | ||||||||||||||||||
| Optical gap | x | x | |||||||||||||||||
| Particles | x | x | x | x | |||||||||||||||
| Phase changes | x | ||||||||||||||||||
| Reflectivity | x | x | x 6) | ||||||||||||||||
| Refractive index | x | x | |||||||||||||||||
| Resistivity | x | ||||||||||||||||||
| Step coverage | x 1) | x 1) | |||||||||||||||||
| Surface roughness | x | x | x | ||||||||||||||||
| Thermal conductivity | |||||||||||||||||||
| Thin film thickness | x 1) | x 1) | x 2) | x 2) | x | x | x | x 5) | x 3) | x | |||||||||
| Voids in wafer bonding | x | x | x | ||||||||||||||||
| Wafer thickness | x 1) | x 1) | x | ||||||||||||||||
- Using the cross section method
- Using the create step method
- With known resistivity
- Composition information for crystalline materials
- Only single layer
- Good for characterization of VCSEL structures and DBR mirrors
Choose characterization topic
- Element analysis
- Measurement of film thickness and optical constants
- Photoluminescence mapping
- Sample imaging
- Sample preparation for inspection
- Stress measurement
- Hardness measurement
- Wafer thickness measurement
- Topographic measurement
- Contact angle measurement
- Four-Point Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy
Choose equipment
AFM
Element analysis
Optical and stylus profilers
Optical microscopes
Optical characterization
- Ellipsometer
- Filmtek 4000
- Prism Coupler
- PL mapper - Photoluminescence mapper
- Lifetime scanner MDPmap
SEMs at CEN
- FIB-SEM FEI QUANTA 200 3D
- Dual Beam FEI Helios Nanolab 600
- SEM FEI Nova 600 NanoSEM
- SEM FEI Quanta 200 ESEM FEG
- SEM Inspect S
SEMs at Danchip
TEMs at CEN
Electrical measurements
- 4-Point Probe
- Probe station
- III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)