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Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions

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| '''Chemical solution'''
| '''Chemical solution'''
|HNO<math>_3</math>:H<math>_2</math>O:cerisulphate  - 90ml:1200ml:15g
|HNO<math>_3</math>:H<math>_2</math>O:cerisulphate  - 90ml:1200ml:15g
|Commercial chromium etch
|.
CE 8002-A
|-
|-
| '''Process temperature'''
| '''Process temperature'''
|Room temperature
|Room temperature


|Room temperature
|.


|-
|-
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Photoresist (1.5 µm AZ5214E)
Photoresist (1.5 µm AZ5214E)
|
|
Photoresist (1.5 µm AZ5214E)
.
|-
|-
|'''Etch rate'''
|'''Etch rate'''
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~40-100 nm/min  
~40-100 nm/min  
|
|
~10-20 nm/min
.
|-
|-
|'''Batch size'''
|'''Batch size'''
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1-25 wafers at a time
1-25 wafers at a time
|
|
1-25 wafer at a time
.
|-
|-
|'''Size of substrate'''
|'''Size of substrate'''
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4" wafers
4" wafers
|
|
4" wafers
.
|-
|-
|'''Allowed materials'''
|'''Allowed materials'''
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Make a note on the bottle of which materials have been processed.
Make a note on the bottle of which materials have been processed.
|
|
No restrictions.
.
Make a note on the bottle of which materials have been processed.
|-
|-
|}
|}
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