Specific Process Knowledge/Characterization: Difference between revisions
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*[[/DSC Perkin Elmer|DSC Perkin Elmer]] | *[[/DSC Perkin Elmer|DSC Perkin Elmer]] | ||
*[[/Probe station|Probe station]] | *[[/Probe station|Probe station]] | ||
*[[/Hardness measurement|Hardness tester]] | |||
*[[/KLA-Tencor Surfscan 6420|KLA-Tencor Surfscan 6420]] | *[[/KLA-Tencor Surfscan 6420|KLA-Tencor Surfscan 6420]] | ||
*[[/III-V ECV-profiler|III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)]] | *[[/III-V ECV-profiler|III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)]] | ||
*[[/X-Ray Diffractometer|X-Ray Diffractometer ]] | *[[/X-Ray Diffractometer|X-Ray Diffractometer ]] | ||
*[[/XRD|XRD SmartLab]] | *[[/XRD|XRD SmartLab]] |
Revision as of 14:42, 22 October 2018
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Overview of characteristics and where to measure it
Optical Micro- scopes | SEM (incl. EDX) | AFM | Stylus profiler | Optical profiler | Filmtek (reflec- tometer) | Ellip- someter | Thickness stylus | XPS | PL mapper | 4-point probe | Probe station | XRD | Life time scanner | Drop shape analyser | Hardness tester | Differential Scanning Calorimeter DSC | Surfscan | |
Thin film thickness | x 1) | x 1) | x 2) | x 2) | x | x | x | x 5) | x 3) | x | ||||||||
Defects | x | x | ||||||||||||||||
Wafer thickness | x 1) | x 1) | x | |||||||||||||||
Step coverage | x 1) | x 1) | ||||||||||||||||
Particles | x | x | x | x | ||||||||||||||
Element analysis | x | x | x 4) | x 4) | ||||||||||||||
Surface roughness | x | x | x | |||||||||||||||
Deposition uniformity | x | x | x | |||||||||||||||
Film stress | x | x | ||||||||||||||||
Refractive index | x | x | ||||||||||||||||
Reflectivity | x | x | (x) | |||||||||||||||
Resistivity | x | |||||||||||||||||
Breakdown voltage | ||||||||||||||||||
Electrical conductivity | x | |||||||||||||||||
Thermal conductivity | ||||||||||||||||||
Optical gap | x | x | ||||||||||||||||
Crystalinity | x | x | ||||||||||||||||
Charge carrier life time | x | |||||||||||||||||
Contact angle hydrophobic/hydrophillic | x | |||||||||||||||||
Material Hardness | x | |||||||||||||||||
Voids in wafer bonding | x | |||||||||||||||||
Phase changes | x | |||||||||||||||||
- Using the cross section method
- Using the create step method
- With known resistivity
- Composition information for crystalline materials
- Only single layer
Choose characterization topic
- Element analysis
- Measurement of film thickness and optical constants
- Photoluminescence mapping
- Sample imaging
- Sample preparation for inspection
- Stress measurement
- Hardness measurement
- Wafer thickness measurement
- Topographic measurement
- Contact angle measurement
- Four-Point Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy
Choose equipment
AFM
Element analysis
Optical and stylus profilers
Optical microscopes
Optical characterization
- Ellipsometer
- Filmtek 4000
- Prism Coupler
- PL mapper - Photoluminescence mapper
- Lifetime scanner MDPmap
SEMs at CEN
- FIB-SEM FEI QUANTA 200 3D
- Dual Beam FEI Helios Nanolab 600
- SEM FEI Nova 600 NanoSEM
- SEM FEI Quanta 200 ESEM FEG
- SEM Inspect S