Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1: Difference between revisions

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 This section assumes that you are familiar with the basic operations of data processing in Avantage. If not, then press [[Specific Process Knowledge/Characterization/XPS/Processing/Basics|'''HERE''']] and go through this part first.
-This is an analysis of ALD deposited layers: A silicon wafer has been coated with with 15 nm Al<sub>2</sub>O<sub>3</sub>, 15 nm of TiO<sub>2</sub> and 16 nm of HfO<sub>2</sub>.
+This is an analysis of ALD deposited layers: A silicon wafer has been coated with with 15 nm Al<sub>2</sub>O<sub>3</sub>, 15 nm of TiO<sub>2</sub> and 16 nm of HfO<sub>2</sub>. In the XPS an experiment with three points of analysis has been set up to analyse this sandwiched structure:
+# Point: snapshot
+## Depth profile: 2keVHigh20secs
+### Hf4f Snap
+### Al2p Snap
+### Si2p Snap
+### C1s Snap
+### Ti2p Snap
+### O1s Snap
+# Point: Scanned
+## Depth profile: 2keVHigh20secs
+### XPS survey
+### Hf4f Scan
+### Al2p Scan
+### Si2p Scan
+### C1s Scan
+### Ti2p Scan
+### O1s Scan
+# Point: Extended +20eV end, 0.2 eV step
+## Depth profile: 2keVHigh20secs
+### XPS survey
+### Hf4f Scan
+### Al2p Scan
+### Si2p Scan
+### C1s Scan
+### Ti2p Scan
+### O1s Scan
 == Guidelines on data processing ==