Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1: Difference between revisions
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= XPS analysis of ALD deposited layers = | = XPS analysis of ALD deposited layers = | ||
This section assumes that you are familiar with the basic operations of data processing in Avantage. If not, then press [[Specific Process Knowledge/Characterization/XPS/Processing/Basics|'''HERE''']] and go through this part first. | This section assumes that you are familiar with the basic operations of data processing in Avantage. If not, then press [[Specific Process Knowledge/Characterization/XPS/Processing/Basics|'''HERE''']] and go through this part first. | ||
This is an analysis of ALD deposited layers: A silicon wafer has been coated with with 15 nm Al<sub>2</sub>O<sub>3</sub>, 15 nm of TiO<sub>2</sub> and 16 nm of HfO<sub>2</sub>. | |||
== Guidelines on data processing == | == Guidelines on data processing == | ||