Specific Process Knowledge/Characterization: Difference between revisions
| Line 22: | Line 22: | ||
|- | |- | ||
|-style="background:#C0C0C0;" | |-style="background:#C0C0C0;" | ||
| Thin film thickness||x 1)||x 1)||x 2)||x 2)||x ||x||x||||||||x 3)||||x|||||| | | Thin film thickness||x 1)||x 1)||x 2)||x 2)||x ||x||x||||||x 5)||x 3)||||x|||||| | ||
|- | |- | ||
|-style="background:#DCDCDC;" | |-style="background:#DCDCDC;" | ||
| Line 81: | Line 81: | ||
| Material Hardness||||||||||||||||||||||||||||||||x | | Material Hardness||||||||||||||||||||||||||||||||x | ||
|- | |- | ||
|-style="background:#C0C0C0;" | |||
| Voids in wafer bonding||||||||||||||||||||x|||||||||||| | |||
|- | |||
| | | | ||
|} | |} | ||
| Line 87: | Line 91: | ||
# Using the create step method | # Using the create step method | ||
# With known resistivity | # With known resistivity | ||
# Composition information | # Composition information for crystalline materials | ||
# Only single layer | |||
== Choose characterization topic == | == Choose characterization topic == | ||
Revision as of 08:08, 18 October 2018
Feedback to this page: click here
Overview of characteristics and where to measure it
| Micro- scopes | SEM (incl. EDX) | AFM | Stylus profiler | Optical profiler | Filmtek (reflec- tometer) | Ellip- someter | Thickness stylus | XPS | PL mapper | 4-point probe | Probe station | XRD | Life time scanner | Drop shape analyser | Hardness tester | |
| Thin film thickness | x 1) | x 1) | x 2) | x 2) | x | x | x | x 5) | x 3) | x | ||||||
| Defects | x | x | ||||||||||||||
| Wafer thickness | x 1) | x 1) | x | |||||||||||||
| Step coverage | x 1) | x 1) | ||||||||||||||
| Particles | x | x | x | |||||||||||||
| Element analysis | x | x | x 4) | x 4) | ||||||||||||
| Surface roughness | x | x | x | |||||||||||||
| Deposition uniformity | x | x | x | |||||||||||||
| Film stress | x | x | ||||||||||||||
| Refractive index | x | x | ||||||||||||||
| Reflectivity | x | x | (x) | |||||||||||||
| Resistivity | x | |||||||||||||||
| Breakdown voltage | ||||||||||||||||
| Electrical conductivity | x | |||||||||||||||
| Thermal conductivity | ||||||||||||||||
| Optical gap | x | x | ||||||||||||||
| Crystalinity | x | |||||||||||||||
| Charge carrier life time | x | |||||||||||||||
| Contact angle hydrophobic/hydrophillic | x | |||||||||||||||
| Material Hardness | x | |||||||||||||||
| Voids in wafer bonding | x | |||||||||||||||
- Using the cross section method
- Using the create step method
- With known resistivity
- Composition information for crystalline materials
- Only single layer
Choose characterization topic
- Element analysis
- Measurement of film thickness and optical constants
- Photoluminescence mapping
- Sample imaging
- Sample preparation for inspection
- Stress measurement
- Hardness measurement
- Wafer thickness measurement
- Topographic measurement
- Contact angle measurement
- Four-Point Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy
Choose equipment
AFM
Element analysis
Optical and stylus profilers
Optical microscopes
Optical characterization
- Ellipsometer
- Filmtek 4000
- Prism Coupler
- PL mapper - Photoluminescence mapper
- Lifetime scanner MDPmap
SEM's at CEN
- FIB-SEM FEI QUANTA 200 3D
- Dual Beam FEI Helios Nanolab 600
- SEM FEI Nova 600 NanoSEM
- SEM FEI Quanta 200 ESEM FEG
- SEM Inspect S