Specific Process Knowledge/Characterization/XPS/Processing: Difference between revisions
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*[[Specific Process Knowledge/Characterization/XPS/Processing/SiliconSandwich|Depth profile of a silicon wafer with nitride, polysilicon and oxide layer]] | *[[Specific Process Knowledge/Characterization/XPS/Processing/SiliconSandwich|Depth profile of a silicon wafer with nitride, polysilicon and oxide layer]] | ||
*[[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1|Depth profile of ALD layers: Silicon wafer with 15 nm Al<sub>2</sub>O<sub>3</sub>, 15 nm of TiO<sub>2</sub> and 16 nm of | *[[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1|Depth profile of ALD layers: Silicon wafer with 15 nm Al<sub>2</sub>O<sub>3</sub>, 15 nm of TiO<sub>2</sub> and 16 nm of HfO<sub>2</sub> ]] | ||
== Periodic table with binding energies of all elements== | == Periodic table with binding energies of all elements== | ||
*[[Specific Process Knowledge/Characterization/XPS/Processing/PeriodicTable]] | *[[Specific Process Knowledge/Characterization/XPS/Processing/PeriodicTable]] | ||