Specific Process Knowledge/Thin film deposition/Temescal: Difference between revisions

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 If the material you are depositing requires a lot of heat to evaporate, the substrates may get warm during the deposition.
-A temperature test of a 100 nm Al deposition at 10 Å/s showed that the back of the wafer stays below 37 <sup>o</sup>C. The same is true for 10 nm Ti/90 nm Au at 10 Å/s. In contrast deposition of 60 nm W at about 1 Å/s heated the substrate to above 120 <sup>o</sup>C.
+A temperature test of a 100 nm Al deposition at 10 Å/s showed that the back of the wafer stays below 37 <sup>o</sup>C. The same is true for 10 nm Ti/90 nm Au at 10 Å/s. In contrast, deposition of 100 nm Nb at 2 Å/s heated the substrate above 104 <sup>o</sup>C (but less than 110 <sup>o</sup>C). Deposition of 60 nm W at about 1 Å/s heated the substrate to above 110 <sup>o</sup>C.
-Al requires intermediate power (about 450 mA and 1000 V supplied to the filament that creates the e-beam) while W requires high power (about 600 mA at 1000 V supplied to the filament).
+You may be able to get some idea of how much the substrate will be heated by looking at the temperature required to give a reasonable vapor pressure for the evaporation. You can find a collection of Honig's vapor pressure curves at the bottom of [https://old.mcallister.com/vacuum.html this page (external link)].
 Please ask us if you need to test the heating of the substrates before making a deposition with the metal you need (contact thinfilm@danchip.dtu.dk).