Specific Process Knowledge/Thin film deposition/Temescal/Acceptance Test: Difference between revisions
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[[File:w26 with resist02.jpg|400px|right|thumb|Si wafer with 1 µm tall nLOF resist pattern and 10 nm Ti/100 nm Au on top. The side wall is free of deposition.]] | [[File:w26 with resist02.jpg|400px|right|thumb|Si wafer with 1 µm tall nLOF resist pattern and 10 nm Ti/100 nm Au on top. The side wall is free of deposition.]] | ||
In the acceptance test, we tested the vacuum performance, the ion source, and the uniformity of the deposited metal films. The test was made in March 2018 by Rebecca Ettlinger. | In the acceptance test, we tested the vacuum performance, the ion source, and the uniformity of the deposited metal films. The test was made in March 2018 by Rebecca Ettlinger and Camilla Tingsager. | ||
The uniformity of the ion beam etch was tested on Si wafers with SiO<sub>2</sub> coating of a known thickness. | The uniformity of the ion beam etch was tested on Si wafers with SiO<sub>2</sub> coating of a known thickness. | ||