Specific Process Knowledge/Thin film deposition/Temescal/Acceptance Test: Difference between revisions
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[[File:w26 with resist02.jpg|400px|right|thumb|Si wafer with 1 µm tall nLOF resist pattern and 10 nm Ti/100 nm Au on top. The side wall is free of deposition.]] | [[File:w26 with resist02.jpg|400px|right|thumb|Si wafer with 1 µm tall nLOF resist pattern and 10 nm Ti/100 nm Au on top. The side wall is free of deposition.]] | ||
In the acceptance test, we tested the vacuum performance, the ion source, and the uniformity of the deposited metal films. | In the acceptance test, we tested the vacuum performance, the ion source, and the uniformity of the deposited metal films. The test was made in March 2018 by Rebecca Ettlinger. | ||
The uniformity of the ion beam etch was tested on Si wafers with SiO<sub>2</sub> coating of a known thickness. | The uniformity of the ion beam etch was tested on Si wafers with SiO<sub>2</sub> coating of a known thickness. | ||