Specific Process Knowledge/Thin film deposition/Deposition of Tungsten: Difference between revisions

Tungsten (W) can be deposited by e-beam evaporation, however, it requires very high temperature to evaporate, so it is at the performance limit of the 6 kW power supplies of our systems. This means the deposition rate is rather low. Additionally, the chamber and substrate(s) will get hot during the deposition (despite water cooling), and this means the pressure rises as the chamber is baked out. It is therefore not easy to deposit films much thicker than 50-60 nm. In the Temescal we stopped the deposition every 20 nm to let the pressure drop. Talk to staff when you want to deposit W (write to thinfilm@danchip.dtu.dk). In the chart below you can compare the deposition equipment.