Specific Process Knowledge/Thin film deposition/Deposition of Gold/Adhesion layers: Difference between revisions
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[[File:Picture14.png|450px|center|thumb|Fig. 11: Left: Ti 2p XPS peak fit of the 2-Ti/20-Au sample. Right: Cr 2p XPS peak fit of the 2-Cr/20-Au sample.]] | [[File:Picture14.png|450px|center|thumb|Fig. 11: Left: Ti 2p XPS peak fit of the 2-Ti/20-Au sample. Right: Cr 2p XPS peak fit of the 2-Cr/20-Au sample.]] | ||
The second analysis was performed to understand whether the oxygen was originating from source ii) or iii). A 2nm Ti/20nm Au/2nm Ti/20nm Au sandwich structure was deposited and analyzed. Both layers of Ti were partially oxidized: the Ti 2p peak signals (Fig. 12a) are present at the same depth together with the O 1s signals (Fig. 12b). The O 1s signal in the Ti layer in contact with the Si3N4 substrate has higher intensity than the one of the Ti layer between the Au layers. Hence, the Ti layer in contact with the substrate is more oxidized, which suggests that Ti reacted with water adsorbed on the substrate surface. The conclusion is that the oxygen originated from | The second analysis was performed to understand whether the oxygen was originating from source ii) or iii). A 2nm Ti/20nm Au/2nm Ti/20nm Au sandwich structure was deposited and analyzed. Both layers of Ti were partially oxidized: the Ti 2p peak signals (Fig. 12a) are present at the same depth together with the O 1s signals (Fig. 12b). The O 1s signal in the Ti layer in contact with the Si3N4 substrate has higher intensity than the one of the Ti layer between the Au layers. Hence, the Ti layer in contact with the substrate is more oxidized, which suggests that Ti reacted with water adsorbed on the substrate surface. The conclusion is that the oxygen originated from oxidation during the e-beam deposition process and from oxidation due to substrate contamination with water and oxygen molecules. | ||
[[File:Picture15.png|450px|center|thumb|Fig. 12: XPS depth profiling of a 2nm Ti/20nm Au/2nm Ti/20nm Au multilayer sample deposited on Si3N4 substrate. For each Ti 2p signal (a) there is an O 1s signal (b) at the same depth. The Ti layer in contact with the Si3N4 substrate is more oxidized than the Ti layer between the Au layers, due to its reaction with oxygen and water adsorbed on the substrate surface.]] | [[File:Picture15.png|450px|center|thumb|Fig. 12: XPS depth profiling of a 2nm Ti/20nm Au/2nm Ti/20nm Au multilayer sample deposited on Si3N4 substrate. For each Ti 2p signal (a) there is an O 1s signal (b) at the same depth. The Ti layer in contact with the Si3N4 substrate is more oxidized than the Ti layer between the Au layers, due to its reaction with oxygen and water adsorbed on the substrate surface.]] | ||