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Specific Process Knowledge/Thin film deposition/Deposition of Gold/Adhesion layers: Difference between revisions

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== Bilayer chemical composition and elemental distribution ==
== Bilayer chemical composition and elemental distribution ==


The knowledge of the chemical composition and elemental distribution of the
The knowledge of the chemical composition and elemental distribution of the bilayer systems is important to understand the type of interaction between the layers and their different structure. To obtain such information, the bilayer systems were investigated using STEM-EDX, STEM-EELS and XPS depth profiling.
bilayer systems is important to understand the type of interaction between


the layers and their di�erent structure. To obtain such information, the
For the chemical distribution of the elements in the 2nm Ti/2nm  Au sample, the STEM-EDX measurements at the Ti/Au interface showed the presence of a continuous Ti layer below the Au layer (Fig. 8a). The analysis of the 2nm Cr/2nm Au sample showed instead the presence of Cr throughout the whole thickness of the Au layer (Fig. 8b). Since Cr and Au were deposited sequentially and not by a co-deposition process, this result suggests a strong inter-diffusion. The 2nm Cr/20nm Au sample was also investigated, to understand the degree of inter-diffusion for a thicker Au layer (Fig. 8c). In this case the inter-diffusion between the elements was incomplete, being present for a thickness of 2-3 nm. This suggests that the diffusion process is limited to such a thickness when Cr and Au are deposited at room temperature.
bilayer systems were investigated using STEM-EDX, STEM-EELS and XPS
depth pro�ling.
For the chemical distribution of the elements in the 2-Ti/2-Au sample,
the STEM-EDX measurements at the Ti/Au interface showed the presence
of a continuous Ti layer below the Au layer (Fig. 5.9a). This result is in
good agreement with the TEM micrograph of Fig. 5.5a.


The analysis of the 2-Cr/2-Au sample showed instead the presence of
[[File:Picture29.png|550px|center|thumb|Fig. 8: STEM-EDX maps of the 2nm Ti/2nm Au sample (a), 2nm Cr/2nm Au sample (b) and 2nm Cr/20nm Au sample (c). The Au L-alpha signal is acquired at 9713 eV, the Ti K-alpha signal at 4510.9 eV and the Cr K-alpha signal at 5414.7 eV.]]
Cr throughout the whole thickness of the Au layer (Fig. 5.9b). Since Cr
and Au were deposited sequentially and not by a co-deposition process, this
result suggests a strong inter-di�usion. The 2-Cr/20-Au sample was also
investigated, to understand the degree of inter-di�usion for a thicker Au
layer (Fig. 5.9c). In this case the inter-di�usion between the elements was
incomplete, being present for a thickness of 2-3 nm. This suggests that the
di�usion process is limited to such a thickness when Cr and Au are deposited
at room temperature.


To verify the chemical composition of the samples, in particular to investigate
To verify the chemical composition of the samples, in particular to investigate a possible presence of oxygen in the adhesion layer, STEM-EELS analysis was used. A line scan across the layer interfaces of the 2-Ti/2-Au sample shows the presence of a Ti core loss L3 edge at 460 eV and an L2 edge at 465 eV. A SiO2 O-K edge is visible at 538 eV, while the O-K edge of O bounded to Ti is found at 532 eV (Fig. 5.10a).
a possible presence of oxygen in the adhesion layer, STEM-EELS
 
analysis was used. A line scan across the layer interfaces of the 2-Ti/2-Au
The same investigation was performed on the 2-Cr/2-Au sample (Fig. 5.10b). The analysis showed a Cr L3 edge at 585 eV and an L2 edge at 594 eV. The SiO2 O-K edge is visible at 545 eV, while at 540 eV a weak OCr-K edge of O bounded to Cr is visible for a limited thickness below Au. Furthermore, the Cr edge presents a compositional tail along the scan
sample shows the presence of a Ti core loss L3 edge at 460 eV and an L2
direction, which con�rms di�usion into the Au layer. For the length of the tail there is no presence of OCr-K edge, indicating that Cr inside Au is in metallic form. This is in good agreement with the observed di�usion, which involves only metallic Cr.  
edge at 465 eV. A SiO2 O-K edge is visible at 538 eV, while the O-K edge
of O bounded to Ti is found at 532 eV (Fig. 5.10a).


The same investigation was performed on the 2-Cr/2-Au sample (Fig.
5.10b). The analysis showed a Cr L3 edge at 585 eV and an L2 edge at
594 eV. The SiO2 O-K edge is visible at 545 eV, while at 540 eV a weak
OCr-K edge of O bounded to Cr is visible for a limited thickness below
Au. Furthermore, the Cr edge presents a compositional tail along the scan
direction, which con�rms di�usion into the Au layer. For the length of the
tail there is no presence of OCr-K edge, indicating that Cr inside Au is in
metallic form. This is in good agreement with the observed di�usion, which
involves only metallic Cr.


The source of oxidation of the adhesion layer could have three origins:
The source of oxidation of the adhesion layer could have three origins: