Specific Process Knowledge/Thin film deposition: Difference between revisions
| Line 25: | Line 25: | ||
*Hummer - ''Gold sputtering system'' | *Hummer - ''Gold sputtering system'' | ||
*PECVD - ''Plasma Enhanced Chemical Vapor deposition'' | *PECVD - ''Plasma Enhanced Chemical Vapor deposition'' | ||
*B2 Furnace LPCVD Nitride - ''Deposition of silicon nitrid'' | *[[/B2 Furnace LPCVD Nitride|B2 Furnace LPCVD Nitride]] - ''Deposition of silicon nitrid'' | ||
*B3 Furnace LPCVD TEOS - ''Deposition of silicon oxide'' | *[[/B3 Furnace LPCVD TEOS|B3 Furnace LPCVD TEOS]] - ''Deposition of silicon oxide'' | ||
*B4 Furnace LPCVD PolySilicon - ''Deposition of polysilicon'' | *[[/B4 Furnace LPCVD PolySilicon|B4 Furnace LPCVD PolySilicon]] - ''Deposition of polysilicon'' | ||
*MVD - ''Molecular Vapor Deposition'' | *MVD - ''Molecular Vapor Deposition'' | ||
Revision as of 13:55, 18 October 2007
Choose material to deposit
Metals
- Aluminium
- Nickel
- Titanium
- Gold
Polymers
- SU8
- Antistiction coating
- Topas
- PMMA
Other materials
Choose deposition equipment
- Alcatel - E-beam evaporator and sputter tool
- Leybold - E-beam evaporator and multiple wafer tool
- Wordentec - Metal evaporator and ?
- Hummer - Gold sputtering system
- PECVD - Plasma Enhanced Chemical Vapor deposition
- B2 Furnace LPCVD Nitride - Deposition of silicon nitrid
- B3 Furnace LPCVD TEOS - Deposition of silicon oxide
- B4 Furnace LPCVD PolySilicon - Deposition of polysilicon
- MVD - Molecular Vapor Deposition