Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
→Deposition of Silicon using sputter deposition technique: Removed refs to Alcatel and Cryofox. Added Lesker sputterer in text |
→Comparison of the methods for deposition of Silicon: removed Alcatel from comparison |
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! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Sputter ([[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]]) | ! Sputter ([[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]]) | ||
! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]]) | ||
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| Ion beam sputter deposition of Si. | | Ion beam sputter deposition of Si. | ||
| Sputter deposition of Si. | | Sputter deposition of Si. | ||
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! Doping facility | ! Doping facility | ||
|Can be doped with boron or phosphorus during deposition | |Can be doped with boron or phosphorus during deposition | ||
|None | |None | ||
|None | |None | ||
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|RF Ar clean | |RF Ar clean | ||
|None | |None | ||
|RF Ar clean | |RF Ar clean | ||
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|10Å to about 3000Å | |10Å to about 3000Å | ||
|No defined limits | |No defined limits | ||
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|10Å to 2500Å | |10Å to 2500Å | ||
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In the order of 1 Å/s, but dependendt on process parameters. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]] | In the order of 1 Å/s, but dependendt on process parameters. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]] | ||
| About 5 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]] | | About 5 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]] | ||
| Depends on process parameters, roughly 1 Å/s. | | Depends on process parameters, roughly 1 Å/s. | ||
|1Å/s to 5Å/s (see below). | |1Å/s to 5Å/s (see below). | ||
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|? | |? | ||
|Platen: 5-60 <sup>o</sup>C | |Platen: 5-60 <sup>o</sup>C | ||
|Wafers can be heated to 100-200°C | |Wafers can be heated to 100-200°C | ||
|20-250 <sup>o</sup>C | |20-250 <sup>o</sup>C | ||
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|. | |. | ||
|Not known | |Not known | ||
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|Poor | |Poor | ||
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|. | |. | ||
|Not tested | |Not tested | ||
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* 1x 150 mm wafer | * 1x 150 mm wafer | ||
* 1x 200 mm wafer | * 1x 200 mm wafer | ||
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* Up to 1x6" wafers | * Up to 1x6" wafers | ||
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*Same materials as on the allowed materials below | *Same materials as on the allowed materials below | ||
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* Silicon wafers | * Silicon wafers | ||
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* Polymers | * Polymers | ||
* Capton tape | * Capton tape | ||
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* Silicon oxide | * Silicon oxide | ||
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| The system is used both for IBSD and IBE. Si deposition can only be performed when it is set up for IBSD. | | The system is used both for IBSD and IBE. Si deposition can only be performed when it is set up for IBSD. | ||
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