Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions
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== Development of continuous nanoetch == | == Development of continuous nanoetch == | ||
Revision as of 07:50, 5 October 2020
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Development of continuous nanoetch
The recipes below have been run on 2" wafers with 30/60/90/120/150 nm lines in zep resist. The wafers were crystalbonded to a 4" oxide carrier leaving only a very small fraction (much less than 1% ) of silicon to be etched. If you intend to etch most of the surface of the wafer to create very small posts or ridges (rather than holes or trenches)
The most used one is the nano1.42 recipe - to access the results, click on the bold link in the bottom of the table.
| Recipe | nano1.0 | nano1.1 | nano1.2 | nano1.3 | nano1.21 | nano1.4 | nano1.41 | nano1.42 | nano1.43 |
|---|---|---|---|---|---|---|---|---|---|
| C4F8 (sccm) | 52 | 52 | 52 | 52 | 75 | 75 | 75 | 75 | 75 |
| SF6 (sccm) | 38 | 38 | 38 | 38 | 38 | 38 | 38 | 38 | 38 |
| O2 (sccm) | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
| Coil power (W) | 800 (F) | 600 (F) | 800 (F) | 600 (F) | 800 (F) | 800 (F) | 800 (F) | 800 (F) | 800 (F) |
| Platen power (W) | 50 | 50 | 50 | 40 | 50 | 50 | 75 | 40 | 30 |
| Pressure (mtorr) | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| Temperature (degs C) | 10 | 10 | -10 | -10 | -10 | -20 | -20 | -20 | -20 |
| Process time (s) | 120 | 120 | 120 | 120 | 120 | 120 | 120 | 120 | 120 |
| Etch rates (nm/min) | |||||||||
| Averages | 295 | 228 | 299 | 235 | 183 | 183 | 166 | 160 | 148 |
| Std. Dev | 36 | 29 | 37 | 20 | 9 | 9 | 9 | 8 | 6 |
| Zep etch rate (nm/min) | |||||||||
| 172 | 95 | 94 | 69 | 67 | 101 | 65 | 55 | ||
| Sidewall angle (degrees) | |||||||||
| Averages | 93 | 94 | 92 | 94 | 91 | 91 | 90 | 90 | 90 |
| Std. Dev | 1 | 1 | 0 | 1 | 0 | 0 | 1 | 0 | 0 |
| CD loss (nm pr edge) | |||||||||
| Averages | -11 | -13 | -17 | -10 | -10 | -10 | -20 | -13 | -24 |
| Std. Dev | 12 | 10 | 11 | 14 | 15 | 15 | 16 | 15 | 21 |
| Bowing (nm) | |||||||||
| Averages | 31 | 42 | 13 | 16 | 6 | 6 | 3 | -3 | 0 |
| Std. Dev | 7 | 6 | 4 | 3 | 2 | 2 | 2 | 3 | 1 |
| Bottom curvature | |||||||||
| Averages | -45 | -45 | -44 | -43 | -32 | -32 | -34 | -32 | -39 |
| Std. Dev | 5 | 7 | 4 | 9 | 10 | 10 | 9 | 8 | 9 |
| Images | Images | Images | Images | Images | Images | Images | Images | Images | Images |
- Etch of nanostructures in silicon on the ICP Metal Etcher
- Nanoetch contest: DRIE-Pegasus versus ASE (nano1.42 versus pxnano2)
Development of switched nanoetch process
On the basis of the pxnano2 recipe from the ASE we will try to make a similar Bosch process on the Pegasus.
| Recipe | Step | Temp. | Deposition step | Etch step | Process observations | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Time | Pressure | C4F8 | SF6 | O2 | Coil | Time | Pressure | C4F8 | SF6 | O2 | Coil | Platen | Hardware | Runs | |||
| nanobosch6 | A | 20 | 2.5 | 10 | 50 | 0 | 0 | 500 | 5.0 | 10 | 40 | 60 | 5 | 350 | 30 | LF+B100 | Click |
| nb-1.0 | A | 20 | 2.5 | 10 | 50 | 0 | 0 | 500 | 5.0 | 10 | 50 | 50 | 5 | 350 | 30 | LF+B100 | Click |
| nb-1.1 | A | 20 | 2.5 | 10 | 50 | 0 | 0 | 500 | 5.0 | 10 | 50 | 50 | 5 | 350 | 50 | LF+B100 | Click |
| nb-1.2 | A | 20 | 2.5 | 10 | 50 | 0 | 0 | 500 | 5.0 | 10 | 50 | 50 | 5 | 500 | 50 | LF+B100 | Click |
| barcstrip | A | 20 | 30 | 4 (3@15) | 0 | 0 | 40 | 200 | 20 | LF+B100 | Click | ||||||
| nanobosch7 | A | 20 | 2.5 | 10 | 50 | 0 | 0 | 500 | 5.0 | 10 | 40 | 60 | 5 | 350 | 30 | LF+B100 | Click |
| LF+B100 | Click | ||||||||||||||||