Specific Process Knowledge/Thin film deposition/Deposition of Chromium: Difference between revisions
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|0.5Å/s to 10Å/s | |0.5Å/s to 10Å/s | ||
|10Å/s to 15Å/s (e-beam) | |10Å/s to 15Å/s (e-beam) | ||
Sputtering: Depends on process parameters. See process log. | Sputtering: Depends on process parameters. See [[Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Sputtering of Cr in Wordentec|here]] and process log. | ||
|10Å/s | |10Å/s | ||
|Depends on process parameters. See process log. | |Depends on process parameters. See process log. |
Revision as of 10:17, 27 July 2018
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Chromium deposition
Chromium can be deposited by e-beam evaporation and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment.
E-beam evaporation (Temescal) | E-beam evaporation (Wordentec) | E-beam evaporation (Physimeca) | Sputter deposition (Lesker sputterer) | |
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General description | E-beam deposition of Chromium | E-beam and sputter deposition of Chromium | E-beam deposition of Chromium | Sputter deposition of Chromium |
Pre-clean | Ar ion bombardment | RF Ar clean | RF Ar clean | |
Layer thickness | 10Å to 1µm* | 10Å to 1µm* | 10Å to 1000 Å | at least up to 200 nm |
Deposition rate | 0.5Å/s to 10Å/s | 10Å/s to 15Å/s (e-beam)
Sputtering: Depends on process parameters. See here and process log. |
10Å/s | Depends on process parameters. See process log. |
Batch size |
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Allowed substrates |
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Allowed materials |
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Comment |
* For thicknesses above 600 nm, request permission from metal@danchip.dtu.dk to ensure there is enough material.
Studies of Cr deposition processes
Uniformity of Cr layers - Uniformity of Cr layers deposited with different methods and settings
Sputtering of Cr in Wordentec- Settings and deposition rates