Specific Process Knowledge/Thin film deposition/Deposition of Chromium: Difference between revisions
m →Chromium deposition: added under construction |
→Chromium deposition: updated with Lesker and Temescal |
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|10Å to 1µm* | |10Å to 1µm* | ||
|10Å to 1000 Å | |10Å to 1000 Å | ||
| | |at least up to 200 nm | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Deposition rate | ! Deposition rate | ||
| | |0.5Å/s to 10Å/s | ||
|10Å/s to 15Å/s | |10Å/s to 15Å/s (e-beam) | ||
Sputtering: depends on process parameters, see [[Sputtering of Cr in Wordentec|here.]] | |||
|10Å/s | |10Å/s | ||
| | |Depends on process parameters. See process log. | ||
|- | |- | ||
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! Batch size | ! Batch size | ||
| | | | ||
* | *4x6" wafers or | ||
*smaller pieces | *3x8" wafers (ask for holder) | ||
*Many smaller pieces | |||
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*24x2" wafers or | *24x2" wafers or | ||
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*Several smaller pieces | *Several smaller pieces | ||
| | | | ||
* | *1x6" wafers | ||
* | *Smaller pieces/wafers | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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* Silicon wafers | * Silicon wafers | ||
* | * and almost any other | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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* Silicon oxide | |||
* Silicon oxide | *Silicon (oxy)nitride | ||
* Silicon (oxy)nitride | *Photoresist | ||
* Photoresist | *PMMA | ||
* PMMA | *Mylar | ||
* Mylar | *Metals | ||
* | *See also the cross-contamination sheet | ||
* | |||
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* Silicon | * Silicon | ||
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* Mylar | * Mylar | ||
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* | * almost any | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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'''*''' ''For thicknesses above | '''*''' ''For thicknesses above 600 nm, request permission from metal@danchip.dtu.dk to ensure there is enough material.'' | ||
== Studies of Cr deposition processes == | == Studies of Cr deposition processes == |
Revision as of 10:10, 27 July 2018
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Chromium deposition
Chromium can be deposited by e-beam evaporation and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment.
E-beam evaporation (Temescal) | E-beam evaporation (Wordentec) | E-beam evaporation (Physimeca) | Sputter deposition (Lesker sputterer) | |
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General description | E-beam deposition of Chromium | E-beam and sputter deposition of Chromium | E-beam deposition of Chromium | Sputter deposition of Chromium |
Pre-clean | Ar ion bombardment | RF Ar clean | RF Ar clean | |
Layer thickness | 10Å to 1µm* | 10Å to 1µm* | 10Å to 1000 Å | at least up to 200 nm |
Deposition rate | 0.5Å/s to 10Å/s | 10Å/s to 15Å/s (e-beam)
Sputtering: depends on process parameters, see here. |
10Å/s | Depends on process parameters. See process log. |
Batch size |
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Allowed substrates |
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Allowed materials |
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Comment |
* For thicknesses above 600 nm, request permission from metal@danchip.dtu.dk to ensure there is enough material.
Studies of Cr deposition processes
Uniformity of Cr layers - Uniformity of Cr layers deposited with different methods and settings
Sputtering of Cr in Wordentec- Settings and deposition rates