Specific Process Knowledge/Thin film deposition/Deposition of Chromium: Difference between revisions

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|10Å to 1µm*
|10Å to 1µm*
|10Å to 1000 Å
|10Å to 1000 Å
|.
|at least up to 200 nm
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|/s to 15Å/s
|0.5Å/s to 10Å/s
|10Å/s to 15Å/s
|10Å/s to 15Å/s (e-beam)
Sputtering: depends on process parameters, see [[Sputtering of Cr in Wordentec|here.]]
|10Å/s
|10Å/s
|Depending on process parameters, see [[Sputtering of Cr in Wordentec|here.]]
|Depends on process parameters. See process log.
|-
|-


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! Batch size
! Batch size
|
|
*Up to 1x4" wafers
*4x6" wafers or
*smaller pieces
*3x8" wafers (ask for holder)
*Many smaller pieces
|
|
*24x2" wafers or  
*24x2" wafers or  
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*Several smaller pieces  
*Several smaller pieces  
|
|
*24x2" wafers or
*1x6" wafers
*6x4" wafers or
*Smaller pieces/wafers
*6x6" wafers
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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|
|
* Silicon wafers  
* Silicon wafers  
* Quartz wafers
* and almost any other
* Pyrex wafers
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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|
|
* Silicon
* Silicon oxide
* Silicon oxide  
*Silicon (oxy)nitride
* Silicon (oxy)nitride  
*Photoresist
* Photoresist  
*PMMA
* PMMA  
*Mylar
* Mylar  
*Metals
* SU-8
*See also the cross-contamination sheet
* Metals
|
|
* Silicon
* Silicon
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* Mylar  
* Mylar  
|
|
* Silicon
* almost any
* Silicon oxide
* Silicon nitride
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
|-
|-
|-style="background:LightGrey;  color:black"
|-style="background:LightGrey;  color:black"
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|}  
|}  
'''*''' ''For thicknesses above 200 nm permission from ThinFilm group is required.''
'''*''' ''For thicknesses above 600 nm, request permission from metal@danchip.dtu.dk to ensure there is enough material.''


== Studies of Cr deposition processes ==
== Studies of Cr deposition processes ==

Revision as of 11:10, 27 July 2018

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Chromium deposition

Chromium can be deposited by e-beam evaporation and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment.



E-beam evaporation (Temescal) E-beam evaporation (Wordentec) E-beam evaporation (Physimeca) Sputter deposition (Lesker sputterer)
General description E-beam deposition of Chromium E-beam and sputter deposition of Chromium E-beam deposition of Chromium Sputter deposition of Chromium
Pre-clean Ar ion bombardment RF Ar clean RF Ar clean
Layer thickness 10Å to 1µm* 10Å to 1µm* 10Å to 1000 Å at least up to 200 nm
Deposition rate 0.5Å/s to 10Å/s 10Å/s to 15Å/s (e-beam)

Sputtering: depends on process parameters, see here.

10Å/s Depends on process parameters. See process log.
Batch size
  • 4x6" wafers or
  • 3x8" wafers (ask for holder)
  • Many smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 1x 2" wafer or
  • 1x 4" wafers or
  • Several smaller pieces
  • 1x6" wafers
  • Smaller pieces/wafers
Allowed substrates
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • III-V materials
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • Silicon wafers
  • and almost any other
Allowed materials
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • Metals
  • See also the cross-contamination sheet
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • almost any
Comment

* For thicknesses above 600 nm, request permission from metal@danchip.dtu.dk to ensure there is enough material.

Studies of Cr deposition processes

Uniformity of Cr layers - Uniformity of Cr layers deposited with different methods and settings

Sputtering of Cr in Wordentec- Settings and deposition rates