Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions
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===Changing the Cl2/N2 ratio=== | ===Changing the Cl2/N2 ratio=== | ||
<gallery caption="Result of | <gallery caption="Result of changing the Cl2/N2 ratio." widths="500px" heights="400px" perrow="3"> | ||
Image:S0_oxide_05.jpg|Top view of the oxide mask before etching. It is the TRAVKA50 mask, but it is clear that the CD reduction is about the 1-1.5 µm of the lines. | Image:S0_oxide_05.jpg|Top view of the oxide mask before etching. It is the TRAVKA50 mask, but it is clear that the CD reduction is about the 1-1.5 µm of the lines. | ||